2013. 8. 23 1/8 semiconductor technical data KGF15N60FDA revision no : 0 general description kec field stop trench igbts offer low switching losses, high energy efficiency and short circuit ruggedness. it is designed for applications such as motor control, uninterrupted power features h high speed switching h high ruggedness, temperature stable behavior h short circuit withstand times ! 5us(@t c =100 ? ) h extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature characteristic symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges ? 20 v collector current @tc=25 ? i c 15 a @tc=100 ? 7.5 a pulsed collector current i cm * 30 a diode continuous forward current @tc=25 ? i f 15 a diode maximum forward current i fm * 45 a maximum power dissipation @tc=25 ? p d 50 w @tc=100 ? 20 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r thjc 2.5 ? /w thermal resistance, junction to case (diode) r t h jcd 3.6 ? /w thermal resistance, junction to ambient r t h ja 62.5 ? /w thermal characteristic e c g
2013. 8. 23 2/8 KGF15N60FDA revision no : 0 electrical characteristics (ta=25 ? ? ) *notes(1) energy loss include tail current and diode reverse recovery. marking characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =250 u 600 - - v collector cut-off current i ces v ge =0v, v ce =600v - - 250 u gate leakage current i ges v ce =0v, v ge = ? 20v - - ? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =2ma 4.5 5.5 7.0 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =15a - 1.65 2.1 v v ge =15v, i c =30a, t c =25 ? - 2.2 - v v ge =15v, i c =15a, t c =125 ? - 1.95 - v dynamic total gate charge q g v cc =300v, v ge =15v, i c = 15a - 60 - nc gate-emitter charge q ge - 10 - nc gate-collector charge q gc - 35 - nc turn-on delay time t d(on) v cc =300v, i c =15a, v ge =15v,r g =10 ? inductive load, t c = 25 ? (note 1) - 25 - ns rise time t r - 15 - ns turn-off delay time t d(off) - 95 - ns fall time t f - 35 - ns turn-on switching loss e on - 0.2 0.26 mj turn-off switching loss *note(1) e off - 0.15 0.2 mj total switching loss e ts - 0.35 0.46 mj turn-on delay time t d(on) v cc =300v, i c =15a, v ge =15v, r g =10 ? inductive load, t c = 125 ? (note 1) - 30 - ns rise time t r - 20 - ns turn-off delay time t d(off) - 100 - ns fall time t f - 60 - ns turn-on switching loss e on - 0.25 - mj turn-off switching loss *note(1) e off - 0.25 - mj total switching loss e ts - 0.5 - mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 1250 1650 pf ouput capacitance c oes - 90 - pf reverse transfer capacitance c res - 50 - pf short circuit withstand time t sc v cc =300v, v ge =15v, t c =100 ? 5 - - s
2013. 8. 23 3/8 KGF15N60FDA revision no : 0 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 15a t c =25 ? - 1.65 2.3 v t c =125 ? - 1.7 - diode reverse recovery time t rr i f = 15a di/dt = 600a/ s t c =25 ? - 55 - ns t c =125 ? - 70 - diode peak reverse recovery current i rr t c =25 ? - 11.5 - a t c =125 ? - 12.5 - diode reverse recovery charge q rr t c =25 ? - 0.35 - c t c =125 ? - 0.50 -
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2013. 8. 23 8/8 KGF15N60FDA revision no : 0
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